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QS6U22
Transistors
2.5V Drive Pch+SBD MOS FET
QS6U22
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
External dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
1.0MAX
0.85
0.7
Features
1) The QS6U22 combines Pch MOS FET with a Schottky
(6)
(5)
(4)
0~0.1
barrier diode in a TSMT6 package.
2) Low on-state resistance with fast switching.
1pin mark
(1)
(2)
0.4
(3)
0.16
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
Applications
Load switch, DC / DC conversion
Packaging specifications
Each lead has same dimensions
Abbreviated symbol : U22
Equivalent circuit
Type
Package
Code
Taping
TR
(6)
(5)
(4)
QS6U22
Basic ordering unit (pieces)
3000
? 2
? 1
(1) Anode
(2) Source
(1)
(2)
(3)
(3) Gate
(4) Drain
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(5) N / C
(6) Cathode
? A protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Rev.A
1/4
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